Xadio

(Nachfolgend Auszug aus dem Datenblatt "Octal buffer/line driver; 3-state 74AHC541" von Philips Semiconductors)

SYMBOL	PARAMETER	CONDITIONS	TYPICAL	UNIT
AHC	AHCT
t_PHL/t_PLH	propagation delay A_n to Y_n	C_L =15 pF; V_CC =5 V	3.5	3.5	ns
C_I	input capacitance	V_I =V_CC or GND	3	3	pF
C_O	output capacitance		4.0	4.0	pF
C_PD	power dissipation capacitance	C_L =50 pF; f = 1 MHz; notes 1 and 2	10	12	pF

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

AHC

AHCT

t_PHL/t_PLH

propagation delay
A_n to Y_n

C_L =15 pF;
V_CC =5 V

3.5

C_I

input capacitance

V_I =V_CC or GND

C_O

output capacitance

4.0

C_PD

power dissipation
capacitance

C_L =50 pF;
f = 1 MHz;
notes 1 and 2

1. CPD is used to determine the dynamic power dissipation (P_D in µW).
P_D =C_PD x V_CC² x f_i + ∑ (C_L x V_CC² x f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
∑ (C_L x V_CC² x f_o) = sum of outputs;
C_L = output load capacitance in pF;
V_CC = supply voltage in Volts.

2. The condition is V_I = GND to V_CC.

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CC	DC supply voltage		-0.5	+7.0	V
V_I	input voltage		-0.5	+7.0	V
I_IK	DC input diode current	V_I < -0.5 V; note 1	-	-20	mA
I_OK	DC output diode current	V_O < -0.5 V or V_O > V_CC + 0.5 V; note 1	-	±20	mA
I_O	DC output source or sink current	-0.5 V < V_O < V_CC + 0.5 V	-	±25	mA
I_CC	DC V_CC or GND current		-	±75	mA
T_stg	storage temperature		-65	+150	°C
P_D	power dissipation per package	for temperature range: -40 to +125 °C; note 2	-	500	mW

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_CC

DC supply voltage

-0.5

+7.0

V_I

input voltage

-0.5

+7.0

I_IK

DC input diode current

V_I < -0.5 V; note 1

-20

I_OK

DC output diode current

V_O < -0.5 V or V_O > V_CC + 0.5 V; note 1

±20

I_O

DC output source or sink current

-0.5 V < V_O < V_CC + 0.5 V

±25

I_CC

DC V_CC or GND current

±75

T_stg

storage temperature

-65

+150

°C

P_D

power dissipation per package

for temperature range: -40 to +125 °C; note 2

500

Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO-package: above 70 °C the value of P_D derates linearly with 8 mW/K.
For TSSOP-package: above 60 °C the value of P_D derates linearly with 5.5 mW/K.

Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).

SYMBOL	PARAMETER	TEST CONDITIONS	T_amb (°C)	UNIT
25	-40 to +85	-40 to +125
OTHER	V_CC (V)	MIN.	TYP.	MAX.	MAX.	MIN.	MIN.	MAX.
V_IH	HIGH-level input voltage		2.0	1.5	-	-	1.5	-	1.5	-	V
3.0	2.1	-	-	2.1	-	2.1	-
5.5	3.85	-	-	3.85	-	3.85	-
V_IL	LOW-level input voltage		2.0	-	-	0.5	-	0.5	-	0.5	V
3.0	-	-	0.9	-	0.9	-	0.9
5.5	-	-	1.65	-	1.65	-	1.65
V_OH	HIGH-level output voltage	V_I =V_IH or V_IL; I_O = -50 µA	2.0	1.9	2.0	-	1.9	-	1.9	-	V
3.0	2.9	3.0	-	2.9	-	2.9	-
4.5	4.4	4.5	-	4.4	-	4.4	-
V_I =V_IH or V_IL; IO = -4.0 mA	3.0	2.58	-	-	2.48	-	2.40	-	V
V_I =V_IH or V_IL; I_O = -8.0 mA	4.5	3.94	-	-	3.8	-	3.70	-
V_OL	LOW-level output voltage	V_I =V_IH or V_IL; I_O =50µA	2.0	-	0	0.1	-	0.1	-	0.1	V
3.0	-	0	0.1	-	0.1	-	0.1
4.5	-	0	0.1	-	0.1	-	0.1
V_I =V_IH or V_IL; I_O = 4.0 mA	3.0	-	-	0.36	-	0.44	-	0.55	V
V_I =V_IH or V_IL; I_O = 8.0 mA	4.5	-	-	0.36	-	0.44	-	0.55
I_I	input leakage current	V_I =V_CC or GND	5.5	-	-	0.1	-	1.0	-	2.0	µA
I_OZ	3-state output OFF-state current	V_I =V_IH or V_IL; V_O =V_CC or GND	5.5	-	-	±0.25	-	±2.5	-	±10.0	µA
I_CC	quiescent supply current	V_I =V_CC or GND; I_O =0	5.5	-	-	4.0	-	40	-	80	µA
C_I	input capacitance		-	-	3	10	-	10	-	10	pF

SYMBOL

PARAMETER

TEST CONDITIONS

T_amb (°C)

UNIT

-40 to +85

-40 to +125

OTHER

V_CC (V)

MIN.

TYP.

MAX.

MIN.

MAX.

V_IH

HIGH-level input
voltage

2.0

1.5

3.0

2.1

5.5

3.85

V_IL

LOW-level input
voltage

2.0

0.5

3.0

0.9

5.5

1.65

V_OH

HIGH-level output
voltage

V_I =V_IH or V_IL;
I_O = -50 µA

2.0

1.9

2.0

1.9

3.0

2.9

3.0

2.9

4.5

4.4

4.5

4.4

V_I =V_IH or V_IL;
IO = -4.0 mA

3.0

2.58

2.48

2.40

V_I =V_IH or V_IL;
I_O = -8.0 mA

4.5

3.94

3.8

3.70

V_OL

LOW-level output
voltage

V_I =V_IH or V_IL;
I_O =50µA

2.0

0.1

3.0

0.1

4.5

0.1

V_I =V_IH or V_IL;
I_O = 4.0 mA

3.0

0.36

0.44

0.55

V_I =V_IH or V_IL;
I_O = 8.0 mA

4.5

0.36

0.44

0.55

I_I

input leakage
current

V_I =V_CC or GND

5.5

0.1

1.0

2.0

µA

I_OZ

3-state output
OFF-state current

V_I =V_IH or V_IL;
V_O =V_CC or GND

5.5

±0.25

±2.5

±10.0

µA

I_CC

quiescent supply
current

V_I =V_CC or GND;
I_O =0

5.5

4.0

µA

C_I

input capacitance

Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).

SYMBOL	PARAMETER	TEST CONDITIONS	T_amb (°C)	UNIT
25	-40 to +85	-40 to +125
OTHER	V_CC (V)	MIN.	TYP.	MAX.	MAX.	MIN.	MIN.	MAX.
V_IH	HIGH-level input voltage		4.5 to 5.5	2.0	-	-	2.05	-	2.0	-	V
V_IL	LOW-level input voltage		4.5 to 5.5	-	-	0.8	-	0.8	-	0.8	V
V_OH	HIGH-level output voltage	V_I =V_IH or V_IL; I_O = -50 µA	4.5	4.4	4.5	-	4.4	-	4.4	-	V
V_I =V_IH or V_IL; I_O = -8.0 mA	4.5	3.94	-	-	3.8	-	3.70	-	V
V_OL	LOW-level output voltage	V_I =V_IH or V_IL; I_O =50µA	4.5	-	0	0.1	-	0.1	-	0.1	V
V_I =V_IH or V_IL; I_O = 8.0 mA	4.5	-	-	0.36	-	0.44	-	0.55	V
I_I	input leakage current	V_I =V_IH or VIL	5.5	-	-	0.1	-	1.0	-	2.0	µA
I_OZ	3-state output OFF-state current	V_I =V_IH or V_IL; V_O =V_CC or GND per input pin; other inputs at VCC or GND; IO =0	5.5	-	-	±0.25	-	±2.5	-	±10.0	µA
I_CC	quiescent supply current	V_I =V_CC or GND; I_O =0	5.5	-	-	4.0	-	40	-	80	µA
ΔI_CC	additional quiescent supply current per input pin	V_I =V_CC - 2.1 V other inputs at V_CC or GND; I_O =0	4.5 to 5.5	-	-	1.35	-	1.5	-	1.5	mA
C_I	input capacitance		-	-	3	10	-	10	-	10	pF

SYMBOL

PARAMETER

TEST CONDITIONS

T_amb (°C)

UNIT

-40 to +85

-40 to +125

OTHER

V_CC (V)

MIN.

TYP.

MAX.

MIN.

MAX.

V_IH

HIGH-level input
voltage

4.5 to 5.5

2.0

2.05

2.0

V_IL

LOW-level input
voltage

4.5 to 5.5

0.8

V_OH

HIGH-level output
voltage

V_I =V_IH or V_IL;
I_O = -50 µA

4.5

4.4

4.5

4.4

V_I =V_IH or V_IL;
I_O = -8.0 mA

4.5

3.94

3.8

3.70

V_OL

LOW-level output
voltage

V_I =V_IH or V_IL;
I_O =50µA

4.5

0.1

V_I =V_IH or V_IL;
I_O = 8.0 mA

4.5

0.36

0.44

0.55

I_I

input leakage
current

V_I =V_IH or VIL

5.5

0.1

1.0

2.0

µA

I_OZ

3-state output
OFF-state current

V_I =V_IH or V_IL;
V_O =V_CC or GND
per input pin;
other inputs at
VCC or GND;
IO =0

5.5

±0.25

±2.5

±10.0

µA

I_CC

quiescent supply
current

V_I =V_CC or GND;
I_O =0

5.5

4.0

µA

ΔI_CC

additional
quiescent supply
current per input
pin

V_I =V_CC - 2.1 V
other inputs at
V_CC or GND;
I_O =0

4.5 to 5.5

1.35

1.5

C_I

input capacitance